Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit question’s attachments.. explain
